Sheet resistance of GaAs conductive layers isolated by proton irradiation

Electrical isolation of p-type GaAs layers by ion irradiation

Food Irradiation Fact Sheet

Why irradiate food products? Approximately 25% of all food products are lost after harvesting due to insects, vermin, and spoilage. Currently, a significant number of chemicals are used on food products for preserving/preventing insect losses. In roots and tubers, sprouting can be a major cause of losses. In developing countries where handling, transportation, and storage conditions are less ad...

Proton Irradiation

' The kinetics of recuperation following initial doses of 470 rads of 56 Mev protons and 350 rads of Co" 7 radiation were investigated by means of the paired-dose method. By using semilog plots, recovery half-times of 4.85 ± .85 days and 2.02 ± .45 day» were found after initial doses of the protons and Co' 7 radiation, respectively.

Photomodulated Reflectance Spectroscopy of GaAsBi/GaAs layers grown by MBE

The III-bismides are considered to be a very attractive set of III-V alloys due to their potential applications in photonic and spintronic devices. The incorporation of bismuth into GaAs, with its band anti-crossing effect in the valence band of GaAs, leads to a decrease in the temperature dependence of the bandgap. Such a material may be very useful in designing temperature-insensitive semicon...

Characterisation of low pressure VPE GaAs diodes before and after 24 GeV / c proton irradiation

GaAs Schottky diode particle detectors have been fabricated upon Low Pressure Vapour Phase Epitaxial GaAs. The devices were characterised with both electrical and charge collection techniques. The height of the Ti-GaAs barrier used was determined via two electrical methods to be 0.81 ± 0.005 and 0.85 ± 0.01 eV. The current density was greater than that expected for an ideal Schottky barrier and...